Analytical models of devices incorporating Quantum Wells (QW) have been developed for calculation of small-signal and high-frequency performance of QW diodes with triangular barriers and thermoionic electron transport. Computer programs for calculation and visualization of QW diode characteristics have been developed. The properties of QW devices with non-ideal QW due to random distribution of impurity atoms have been investigated. Tolerance of majority voting circuits based on transistors with floating gates have been investigated.