Theory and Computer Modeling of Microelectronic and Nanoelectronic Devices

Victor I. Ryzhii,

Professor, Computer Solid State Physics Laboratory

The following research was carried out according to the Project plan:

• Computer simulation of electron transport in unstrained and strained silicon, silicon-germanium and silicon-carbon alloys.
• Computer simulation of hot-electron transport in heterojunction bipolar transistors based on $A_{3}B_{5}$ compound system.
• Theory and modeling of semiconductor devices incorporating resonant-tunneling structures.
• Theory and modeling of novel quantum photodetectors for infrared radiation.